Strain-tunable electronic and magnetic properties of two-dimensional gallium nitride with vacancy defects

• المؤلفون الرئيسيون: Yeoh, Keat Hoe, Chew, Khian Hooi, Yoon, Tiem Leong, Rusi, -, Ong, Duu Sheng
• التنسيق: مقال
• منشور في: AIP Publishing 2020
• الموضوعات: Q Science (General); QC Physics
• الوصول للمادة أونلاين: http://eprints.um.edu.my/24654/; https://doi.org/10.1063/1.5132417

Based on density functional theory, we have investigated the effects of in-plane biaxial strain on the electronic and magnetic properties of the two-dimensional GaN (2D GaN) with Ga- (VGa) or N-vacancy (VN). We considered two different levels of vacancy concentration, i.e., θ = 1 / 62 and θ = 1 / 34...