Influence of post-ammonia annealing temperature on e-beam evaporation deposited GaN layer on patterned sapphire substrate

• Main Authors: Zainal, Norzaini, Samsudin, Muhammad Esmed Alif, Md Taib, Muhamad Ikram, Ahmad, Mohd Anas, Shuhaimi, Ahmad
• Format: Article
• Published: Elsevier 2020
• Subjects: Q Science (General); QC Physics
• Online Access: http://eprints.um.edu.my/25719/; https://doi.org/10.1016/j.spmi.2020.106722
• Institution: Universiti Malaya

In this work, GaN layer was deposited on patterned sapphire substrate (PSS) by e-beam evaporator and subsequently subjected to ammonia annealing at different temperatures of 900 °C, 950 °C, 980 °C and 1100 °C. The crystalline properties of the GaN layer improved as the temperature increased. In part...