Growth mechanisms and characteristics of Sm2O3 based on Ge semiconductor through oxidation and nitridation

• Main Authors: Onik, Tahsin Ahmed Mozaffor, Hawari, Huzein Fahmi, Sabri, Mohd Faizul Mohd, Wong, Yew Hoong
• Format: Article
• Published: Elsevier 2021
• Subjects: TJ Mechanical engineering and machinery
• Online Access: http://eprints.um.edu.my/26479/
• Institution: Universiti Malaya

A systematic study of chemical, structural and electrical properties of Sm2O3 gate stack has been carried out for RF sputtered Sm thin film on Ge substrate followed by thermal oxidation and nitridation at different temperatures, i.e. 300 degrees C-600 degrees C in N2O ambient. The crystallinity and...