The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance

The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance

This work presents an interesting observation on a possible growth regime transition from diffusion-limited to desorption-limited at Multi-Quantum Well (MQW) growth structure. In common practices, this transition is normally observed by increasing the growth temperature. However, in this work, this...

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Bibliographic Details
Main Authors: Hussin, Hayatun Najihah, Talik, Noor Azrina, Abd Rahman, Mohd Nazri, Mahat, Mohd Raqif, Poopalan, Prabakaran, Shuhaimi, Ahmad, Abd Majid, Wan Haliza
Format: Article
Published: Elsevier 2021
Subjects:
QC Physics
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.um.edu.my/28860/
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Institution: Universiti Malaya

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http://eprints.um.edu.my/28860/

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