Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED

Electronic surface, optical and electrical properties of p - GaN activated via in-situ MOCVD and ex-situ thermal annealing in InGaN/GaN LED

Electronic surface properties, optical and electrical characteristics of p-type Mg-doped Gallium Nitride (p-GaN) activated under different thermal annealing condition were investigated. In this work, p-GaN samples were subjected to in-situ and ex-situ thermal annealing process at 650 degrees C in Ni...

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Main Authors: Mahat, Mohamad Raqif, Talik, Noor Azrina, Abd Rahman, Mohd Nazri, Anuar, Mohd Afiq, Allif, Kamarul, Azman, Adreen, Nakajima, Hideki, Shuhaimi, Ahmad, Abd Majid, Wan Haliza
Format: Article
Published: Elsevier 2020
Subjects:
QC Physics
Online Access:http://eprints.um.edu.my/36927/
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Institution: Universiti Malaya

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http://eprints.um.edu.my/36927/

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