Enhancing the electrical properties of vertical OFETs using a P(VDF-TrFE) dielectric layer

• Main Authors: Aziz, Fakhra, Anuar, Afiq, Ahmad, Zubair, Roslan, Nur Adilah, Makinudin, Abdullah Haaziq Ahmad, Bawazeer, Tahani M., Alsenany, Nourah, Alsoufi, Mohammad S., Supangat, Azzuliani
• Format: Article
• Published: Springer 2020
• Subjects: QC Physics; TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.um.edu.my/37233/
• Institution: Universiti Malaya

This work reports on the performance of vertical organic field effect transistors (VOFETs) fabricated using two dissimilar dielectric materials, namely poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) and poly(vinylidene fluoride) (PVDF). A comparison of the devices shows that integrating P(VDF-TrFE) enables the VOFET to exhibit significantly higher current of 0.10 mA with mobility of 6.874 x 10(-4) m(2) V-1 s(-1) as compared with PVDF, which has a current of 0.034 mA and mobility equal to 4.24 x 10(-5) m(2) V-1 s(-1). VOFET fabricated with a P(VDF-TrFE) dielectric layer shows a high current, high mobility, substantial ON/OFF ratio and low threshold voltage. The obtained results demonstrate that the VOFET fabricated with P(VDF-TrFE) dielectric layer allows smooth current flow between electrodes and appreciably improves the device characteristics.