Effects of oxidation duration on the structural and electrical characteristics of Ho2O3 gate oxide on 4H-SiC substrate

• Main Authors: Odesanya, Kazeem Olabisi, Ahmad, Roslina, Andriyana, Andri, Wong, Yew Hoong
• Format: Article
• Published: Springer 2022
• Subjects: TJ Mechanical engineering and machinery; TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.um.edu.my/41982/
• Institution: Universiti Malaya

This study illustrates the fabrication of Ho2O3 film as gate dielectric using the physical vapour deposition method followed by thermal oxidation on a 4H-SiC substrate. The impacts of oxidation duration on the structural and electrical characteristics of the resulting Ho2O3 layers were studied exper...