Simulation framework of NBTI degradation in nano-scale p-MOSFETs from the perspective of hydrogen and non-hydrogen transport formalism / Hanim Hussin

• Main Author: Hussin, Hanim
• Format: Thesis
• Published: 2015
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://studentsrepo.um.edu.my/5936/1/ThesisHanim2015_040915.pdf; http://studentsrepo.um.edu.my/5936/
• Institution: Universiti Malaya

The rapid downscaling of contemporary bulk CMOS devices has worsened the negative bias temperature instability (NBTI) of p-channel Metal-Oxide-Semiconductor-Field-Effect-Transistors (p-MOSFETs), which consequently degrades the performance and reduces the operational lifetime of the device. The main...