Switching characteristic and analysis of insulated-gate bipolar transistor (IGBT)

• Main Author: Bakhtiar, Ahmad
• Format: Undergraduates Project Papers
• Language: English; English; English
• Published: 2009
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://umpir.ump.edu.my/id/eprint/379/1/Switching%20characteristic%20and%20analysis%20of%20insulated-gate%20bipolar%20transistor%20%28IGBT%29%20%28Table%20of%20content%29.pdf; http://umpir.ump.edu.my/id/eprint/379/6/Switching%20characteristic%20and%20analysis%20of%20insulated-gate%20bipolar%20transistor%20%28IGBT%29%20%28Abstract%29.pdf; http://umpir.ump.edu.my/id/eprint/379/12/Switching%20characteristic%20and%20analysis%20of%20insulated-gate%20bipolar%20transistor%20%28IGBT%29%20%28Chapter%201%29.pdf; http://umpir.ump.edu.my/id/eprint/379/
• Institution: Universiti Malaysia Pahang

Test circuit of Insulated-gate Bipolar Transistor (IGBT-type IRGPC50F); standard ultra fast speed IGBT will be operated when gate voltage, Vg is applied to the Gate-terminal. IR2109 (MOSFET/IGBT Driver) will amplify the pulse signal from function generator due to DC voltage supply input amplitude. O...