Ballistic saturation velocity modelling beyond Ohm's law

The ballistic saturation velocity models were presented and its impact towards the failure of Ohm's law was evaluated on nano-circuits design. The ballistic transport is predicted in the presence of high electric field and its behavior is characterized by an onset of the critical voltage, V c ....

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Bibliographic Details
Main Authors: Ismail Saad, Nurmin Bolong, Khairul A Muhamad, Abu Bakar, A.B.A. Rahman, Vijay K Arora
Format: Conference or Workshop Item
Language:English
Published: 2012
Online Access:https://eprints.ums.edu.my/id/eprint/12908/1/Ballistic_Saturation_Velocity_Modelling_Beyond_Ohm.pdf
https://eprints.ums.edu.my/id/eprint/12908/
https://www.researchgate.net/publication/233780022_Ballistic_Saturation_Velocity_Modelling_Beyond_Ohm's_Law
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Institution: Universiti Malaysia Sabah
Language: English
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Summary:The ballistic saturation velocity models were presented and its impact towards the failure of Ohm's law was evaluated on nano-circuits design. The ballistic transport is predicted in the presence of high electric field and its behavior is characterized by an onset of the critical voltage, V c . 5-μ μm resistor shows deviation from Ohm's law for relatively low voltages above V c = 1.9 V. When applied to the voltage division and current division circuits, the lower-length resistors are found to have higher resistance as compared to higher-length resistor even if their ohmic values are the same. Consequently, the power consumption will not only be lower, but also will have a linear behavior that affects the figure of merit with tradeoff between frequency and power in nano-circuits. The results presented can have profound effect on characterization and performance evaluation of nano-circuits being considered for various applications.