Equivalent circuit model analysis of vertical impact ionization MOSFET (IMOS)

• Main Authors: Ismail Saad, Andee Hazwani Syazana B, Mohd Zuhir Hamzah, Bun Seng, C, Nurmin Bolong
• Format: Conference or Workshop Item
• Language: English
• Published: 2015
• Subjects: TA Engineering (General). Civil engineering (General)
• Online Access: https://eprints.ums.edu.my/id/eprint/18605/1/Equivalent%20circuit%20model%20analysis.pdf; https://eprints.ums.edu.my/id/eprint/18605/; https://doi.org/10.1109/AIMS.2015.77
• Institution: Universiti Malaysia Sabah

In this paper, an equivalent circuit model is proposed that describes the avalanche and snapback characteristics of Vertical Impact Ionization MOSFET (IMOS). The equivalent circuit model is constructed using MOS transistors that represent the avalanche characteristics. The main goal is to predict th...