Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 µm wavelength
This study proves the addition of quantum wells to the intrinsic regions of p-i-n GaInNAs/GaAs has improved the performance of optoelectronic devices. The optoelectronic properties that contribute to the device's dark current and photocurrent need to be well understood to develop photo-response...
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Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English English |
Published: |
Elsevier
2022
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Subjects: | |
Online Access: | https://eprints.ums.edu.my/id/eprint/33536/1/Optoelectronic%20properties%20comparison%20of%2010%20and%2020%20multi%20quantum%20wells%20Ga0.952In0.048N0.016As0.984GaAs%20p-i-n%20photodetector%20for%201.0%20%C2%B5m%20wavelength.pdf https://eprints.ums.edu.my/id/eprint/33536/3/Optoelectronic%20properties%20comparison%20of%2010%20and%2020%20multi%20quantum%20wells%20Ga0.952In0.048N0.016As0.984%20_ABSTRACT.pdf https://eprints.ums.edu.my/id/eprint/33536/ https://www.sciencedirect.com/science/article/pii/S0925346722003068?casa_token=nhZbJaPmtcIAAAAA:gHjwWCTRT5-8oUA5IBdXsEIN5UYIZvoPXHxA1D_cXf_C7U5MyC9MtY_VAWJqFFyjQNwiQLzVbKc https://doi.org/10.1016/j.optmat.2022.112272 |
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Institution: | Universiti Malaysia Sabah |
Language: | English English |
Internet
https://eprints.ums.edu.my/id/eprint/33536/1/Optoelectronic%20properties%20comparison%20of%2010%20and%2020%20multi%20quantum%20wells%20Ga0.952In0.048N0.016As0.984GaAs%20p-i-n%20photodetector%20for%201.0%20%C2%B5m%20wavelength.pdfhttps://eprints.ums.edu.my/id/eprint/33536/3/Optoelectronic%20properties%20comparison%20of%2010%20and%2020%20multi%20quantum%20wells%20Ga0.952In0.048N0.016As0.984%20_ABSTRACT.pdf
https://eprints.ums.edu.my/id/eprint/33536/
https://www.sciencedirect.com/science/article/pii/S0925346722003068?casa_token=nhZbJaPmtcIAAAAA:gHjwWCTRT5-8oUA5IBdXsEIN5UYIZvoPXHxA1D_cXf_C7U5MyC9MtY_VAWJqFFyjQNwiQLzVbKc
https://doi.org/10.1016/j.optmat.2022.112272