Optoelectronic properties comparison of 10 and 20 multi quantum wells Ga0.952In0.048N0.016As0.984/GaAs p-i-n photodetector for 1.0 µm wavelength

• Main Authors: Megat Muhammad Ikhsan Megat Hasnan, M.S. Nordin, N. Nayan, K.A. Mohamad, N.F. Basri, A. Alias, Vicker, A.J., I.M. Noor
• Format: Article
• Language: English; English
• Published: Elsevier 2022
• Subjects: QC1-999 Physics
• Online Access: https://eprints.ums.edu.my/id/eprint/33536/1/Optoelectronic%20properties%20comparison%20of%2010%20and%2020%20multi%20quantum%20wells%20Ga0.952In0.048N0.016As0.984GaAs%20p-i-n%20photodetector%20for%201.0%20%C2%B5m%20wavelength.pdf; https://eprints.ums.edu.my/id/eprint/33536/3/Optoelectronic%20properties%20comparison%20of%2010%20and%2020%20multi%20quantum%20wells%20Ga0.952In0.048N0.016As0.984%20_ABSTRACT.pdf; https://eprints.ums.edu.my/id/eprint/33536/; https://www.sciencedirect.com/science/article/pii/S0925346722003068?casa_token=nhZbJaPmtcIAAAAA:gHjwWCTRT5-8oUA5IBdXsEIN5UYIZvoPXHxA1D_cXf_C7U5MyC9MtY_VAWJqFFyjQNwiQLzVbKc; https://doi.org/10.1016/j.optmat.2022.112272
• Institution: Universiti Malaysia Sabah

This study proves the addition of quantum wells to the intrinsic regions of p-i-n GaInNAs/GaAs has improved the performance of optoelectronic devices. The optoelectronic properties that contribute to the device's dark current and photocurrent need to be well understood to develop photo-response...