Gate Oxide Integrity (GOI) Characterization For Deep Submicron CMOS Device

• Main Author: Norain Mohd Saad
• Other Authors: Ramzan Mat Ayub (Advisor)
• Format: Learning Object
• Language: English
• Published: Universiti Malaysia Perlis 2008
• Subjects: Time Dependent Dielectric; Metal oxide semiconductors; Very Large Scale Integration (VLSI); MOS capasitor; Silica; Gate Oxide Integrity (GOI)
• Online Access: http://dspace.unimap.edu.my/xmlui/handle/123456789/1275
• Institution: Universiti Malaysia Perlis

Since the early days of Very Large Scale Integration (VLSI) era, the scaling of gate oxide thickness has been instrumental in controlling the short channel related effects in state-of-the-art device structure, as MOS gate dimensions have been scaled-down dramatically to a present day size of sub-0....