Polysilicon Process Development – The Effect Of PECVD Process Parameters On The Film Characteristics

• المؤلف الرئيسي: Mujahidun Mashuri
• مؤلفون آخرون: Ramzan Mat Ayub (Advisor)
• التنسيق: Learning Object
• اللغة: English
• منشور في: Universiti Malaysia Perlis 2008
• الموضوعات: Silicon; Silica; Integrated circuits > Materials; Polycrystalline silicon film; Low Pressure Chemical Vapor Deposition; Polycrystalline silicon; Polysilicon
• الوصول للمادة أونلاين: http://dspace.unimap.edu.my/xmlui/handle/123456789/1350
• المؤسسة: Universiti Malaysia Perlis

Thin polycrystalline silicon film has been used in the wide range of applications in the production of integrated circuits and other electronic products. Traditionally, polycrystalline silicon is deposited using Low Pressure Chemical Vapor Deposition (LPCVD) process at temperatures around 600 – 7...