Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories

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Main Author:	Zainab Ramli
Other Authors:	Syarifah Norfaezah Sabki (Advisor)
Format:	Learning Object
Language:	English
Published:	Universiti Malaysia Perlis 2008
Subjects:	CMOS transistors Ion trajectories Monte Carlo method Old Monte Carlo method Bipolar transistors Semiconductor technology Integrated circuits
Online Access:	http://dspace.unimap.edu.my/xmlui/handle/123456789/1364
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Institution:	Universiti Malaysia Perlis
Language:	English

id	my.unimap-1364
record_format	dspace
spelling	my.unimap-13642008-10-15T03:34:35Z Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories Zainab Ramli Syarifah Norfaezah Sabki (Advisor) CMOS transistors Ion trajectories Monte Carlo method Old Monte Carlo method Bipolar transistors Semiconductor technology Integrated circuits Access is limited to UniMAP community. The goal of simulating the ion implantation is to predict the distribution of implanted ions in the target and also to predict the amount of damage generated in the target. During ion implantation process, accelerated ions penetrate the surface of the wafer and come to rest in its interior after losing energy through interactions with the nuclei and electrons of the target. This simulation of ion implantation for ion trajectories is divided into three diffusion models which they are Default Model, Monte Carlo (MC) Model and Old Monte Carlo (OMC) Model. The software used to simulate the result is TSUPREM4. To compare the difference between these three models, different implantation energies and numbers of ions trajectories are used to investigate the behavior of dopant, interstitials, vacancies and clustering. Two special structures are built in this project in which one of the structures is implanted at the upper left side and another one is implanted at the upper middle of the structure. As the result, the more ion trajectories are used in the simulation using Monte Carlo method, the more accurate is the result and the higher the implantation energy, the deeper ions can penetrate into the substrate. At the end of the work, it is expected that the investigation on ion trajectories could lead to the improvement of device simulation especially in bipolar and CMOS transistors before a realistic device can be fabricated. 2008-07-02T07:13:37Z 2008-07-02T07:13:37Z 2007-04 Learning Object http://hdl.handle.net/123456789/1364 en Universiti Malaysia Perlis School of Microelectronic Engineering
institution	Universiti Malaysia Perlis
building	UniMAP Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Malaysia Perlis
content_source	UniMAP Library Digital Repository
url_provider	http://dspace.unimap.edu.my/
language	English
topic	CMOS transistors Ion trajectories Monte Carlo method Old Monte Carlo method Bipolar transistors Semiconductor technology Integrated circuits
spellingShingle	CMOS transistors Ion trajectories Monte Carlo method Old Monte Carlo method Bipolar transistors Semiconductor technology Integrated circuits Zainab Ramli Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories
description	Access is limited to UniMAP community.
author2	Syarifah Norfaezah Sabki (Advisor)
author_facet	Syarifah Norfaezah Sabki (Advisor) Zainab Ramli
format	Learning Object
author	Zainab Ramli
author_sort	Zainab Ramli
title	Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories
title_short	Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories
title_full	Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories
title_fullStr	Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories
title_full_unstemmed	Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories
title_sort	simulation of ion implantation using monte carlo method for investigation on ion trajectories
publisher	Universiti Malaysia Perlis
publishDate	2008
url	http://dspace.unimap.edu.my/xmlui/handle/123456789/1364
_version_	1643787267132620800

Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories

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