Design and simulation of Gallium Arsenide based Schottky diodes for RF applications

• Main Author: Ong Chee Meng
• Other Authors: Noraini Othman (Advisor)
• Format: Learning Object
• Language: English
• Published: Universiti Malaysia Perlis 2008
• Subjects: Semiconductors; Silicon; Gallium arsenide; Radio frequency integrated circuits; Schottky Diodes
• Online Access: http://dspace.unimap.edu.my/xmlui/handle/123456789/1966
• Institution: Universiti Malaysia Perlis

Today, being the dawn of a new RF technology wave, the requirement of making semiconductor device which have greater speed in performance, which is realized either as a higher maximum frequency of operation or higher logic switching speeds. Gallium Arsenide (GaAs) based Schottky Diodes have superior...