Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively

Electrical characterization of 0.13 µm NMOS transistor with Retrograde Well and Halo Implant Structure Respectively

Access is limited to UniMAP community.

Saved in:
Bibliographic Details
Main Author: Anas Redzuan, Mokhtar
Other Authors: Noraini Othman (Advisor)
Format: Learning Object
Language:English
Published: Universiti Malaysia Perlis 2008
Subjects:
Computer-aided design
NMOS transistor
Transistors
Negative metal oxide semiconductors (NMOS)
Integrated circuits
Metal oxide semiconductors
Semiconductors
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/1975
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Malaysia Perlis
Language: English

Internet

http://dspace.unimap.edu.my/xmlui/handle/123456789/1975

Similar Items