Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI
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Universiti Malaysia Perlis
2008
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| Online Access: | http://dspace.unimap.edu.my/xmlui/handle/123456789/2018 |
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my.unimap-20182008-10-16T03:52:55Z Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI Rusnita Rafee Norhawati Ahmad (Advisor) Transistors CMOS transistors Metal oxide semiconductors, Complementary Integrated circuits Computer-aided design Access is limited to UniMAP community. Technology CAD (TCAD) refers to the use of computer simulation to model semiconductor processing and device operation. TCAD has two major functions which are process simulation and device simulation. It performs the semiconductor process simulation function and the device function by taking the description of the transistor layout input to simulate the fabrication process and device behavior before the actual silicon is made. This Final Year Project thesis illustrate the use of Synopsys’ Taurus TCAD (TSUPREM-4 and MEDICI) to develop and simulate the fabrication and electrical behavior of 0.13µm NMOS and PMOS transistor. Illustration also includes how process simulation by TSUPREM-4 to produce an output file containing complete structure, mesh and doping information that can be read into MEDICI device simulator to extract electrical characteristics. At the end of this project, the finding shows the threshold voltage and current-voltage curve (ID vs. VGS and ID vs. VDS). The result for electrical characteristics does not show saturation region. There due to the effect of channel length modulation. Beside that, the accuracy of the resistance method is dependent on the threshold voltage. 2008-09-09T07:09:57Z 2008-09-09T07:09:57Z 2008-04 Learning Object http://hdl.handle.net/123456789/2018 en Universiti Malaysia Perlis School of Microelectronic Engineering |
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English |
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Transistors CMOS transistors Metal oxide semiconductors, Complementary Integrated circuits Computer-aided design |
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Transistors CMOS transistors Metal oxide semiconductors, Complementary Integrated circuits Computer-aided design Rusnita Rafee Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI |
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Access is limited to UniMAP community. |
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Norhawati Ahmad (Advisor) |
| author_facet |
Norhawati Ahmad (Advisor) Rusnita Rafee |
| format |
Learning Object |
| author |
Rusnita Rafee |
| author_sort |
Rusnita Rafee |
| title |
Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI |
| title_short |
Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI |
| title_full |
Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI |
| title_fullStr |
Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI |
| title_full_unstemmed |
Electrical characterization of 0.13µm CMOS Transistor using TSUPREM-4 and MEDICI |
| title_sort |
electrical characterization of 0.13µm cmos transistor using tsuprem-4 and medici |
| publisher |
Universiti Malaysia Perlis |
| publishDate |
2008 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/2018 |
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1643787530791813120 |