IR-induced features of AgGaGeS 4 crystalline semiconductors
Link to publisher's homepage at http://www.elsevier.com
Saved in:
| Main Authors: | , , , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
Elsevier Ltd.
2013
|
| Subjects: | |
| Online Access: | http://dspace.unimap.edu.my/xmlui/handle/123456789/25640 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Universiti Malaysia Perlis |
| Language: | English |
| id |
my.unimap-25640 |
|---|---|
| record_format |
dspace |
| spelling |
my.unimap-256402013-06-10T07:44:42Z IR-induced features of AgGaGeS 4 crystalline semiconductors Davydyuk, G.Y. Myronchuk, G.L. Lakshminarayana, G. Yakymchuk, O.V.a Reshak, A.H. Wojciechowski, A. Rakus, P, Alzayed, N. Chmiel, K M. Kityk, I.V. Parasyuk, O.V. glnphysics@rediffmail.com Chalcogenides Optical materials Crystal growth Phonons Link to publisher's homepage at http://www.elsevier.com Complex investigations of the photoconductivity and photoinduced absorption together with the piezoelectric features were performed for the AgGaGeS 4 semiconducting single crystals under the influence of 3.5 μs CO 2 (80 mJ) pulsed laser emitting at 10.6 μm. These crystals are transparent in the wide spectral range 0.417 μm, which allows operating due to their properties in the spectral range covering the excitation of the phonons and electron subsystem. The piezoelectric properties show substantial increment during illumination by microsecond CO 2 laser and irreversible relaxation after swathing off the laser excitation. The temperature dependent studies of absorption and photoconductivity confirm the main role of intrinsic defects forming the tails of electronic states below the bottom of conduction band gap. Principal role of IR-induced electronphonon interactions in the observed changes of the piezoelectricity is demonstrated. 2013-06-10T07:44:42Z 2013-06-10T07:44:42Z 2012-03 Article Journal of Physics and Chemistry of Solids, vol. 73, (3), 2012, pages 439-443 0022-3697 http://www.journals.elsevier.com/journal-of-physics-and-chemistry-of-solids/ http://hdl.handle.net/123456789/25640 en Elsevier Ltd. |
| institution |
Universiti Malaysia Perlis |
| building |
UniMAP Library |
| collection |
Institutional Repository |
| continent |
Asia |
| country |
Malaysia |
| content_provider |
Universiti Malaysia Perlis |
| content_source |
UniMAP Library Digital Repository |
| url_provider |
http://dspace.unimap.edu.my/ |
| language |
English |
| topic |
Chalcogenides Optical materials Crystal growth Phonons |
| spellingShingle |
Chalcogenides Optical materials Crystal growth Phonons Davydyuk, G.Y. Myronchuk, G.L. Lakshminarayana, G. Yakymchuk, O.V.a Reshak, A.H. Wojciechowski, A. Rakus, P, Alzayed, N. Chmiel, K M. Kityk, I.V. Parasyuk, O.V. IR-induced features of AgGaGeS 4 crystalline semiconductors |
| description |
Link to publisher's homepage at http://www.elsevier.com |
| author2 |
glnphysics@rediffmail.com |
| author_facet |
glnphysics@rediffmail.com Davydyuk, G.Y. Myronchuk, G.L. Lakshminarayana, G. Yakymchuk, O.V.a Reshak, A.H. Wojciechowski, A. Rakus, P, Alzayed, N. Chmiel, K M. Kityk, I.V. Parasyuk, O.V. |
| format |
Article |
| author |
Davydyuk, G.Y. Myronchuk, G.L. Lakshminarayana, G. Yakymchuk, O.V.a Reshak, A.H. Wojciechowski, A. Rakus, P, Alzayed, N. Chmiel, K M. Kityk, I.V. Parasyuk, O.V. |
| author_sort |
Davydyuk, G.Y. |
| title |
IR-induced features of AgGaGeS 4 crystalline semiconductors |
| title_short |
IR-induced features of AgGaGeS 4 crystalline semiconductors |
| title_full |
IR-induced features of AgGaGeS 4 crystalline semiconductors |
| title_fullStr |
IR-induced features of AgGaGeS 4 crystalline semiconductors |
| title_full_unstemmed |
IR-induced features of AgGaGeS 4 crystalline semiconductors |
| title_sort |
ir-induced features of aggages 4 crystalline semiconductors |
| publisher |
Elsevier Ltd. |
| publishDate |
2013 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/25640 |
| _version_ |
1643794634492608512 |