Study of the structure properties of Co-doped ZnO thin films grown by pulsed laser deposition

Link to publisher's homepage at http://ijneam.unimap.edu.my/

Saved in:
Bibliographic Details
Main Authors: Ali, A. Yousif, Adawiya, J. Haidar, Nadir, F. Habubi
Other Authors: adawiya_haider@yahoo.com
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2016
Subjects:
XRD
Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41264
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Malaysia Perlis
Language: English
id my.unimap-41264
record_format dspace
spelling my.unimap-412642017-11-21T03:28:54Z Study of the structure properties of Co-doped ZnO thin films grown by pulsed laser deposition Ali, A. Yousif Adawiya, J. Haidar Nadir, F. Habubi adawiya_haider@yahoo.com Co-doped ZnO Pulsed Laser Deposition U.V emission XRD Link to publisher's homepage at http://ijneam.unimap.edu.my/ We report the fabrication of Co-doped ZnO thin films prepared by Pulsed Laser Deposition (PLD) on glass substrates by Nd-YAG Q-Switching second harmonic generation (SHG) Pulsed Laser with a wavelength of 532nm, repetitiion rate of 10 Hz and pulsed width 10ns. The effect of doping on the structure properties of the ZnO:Co films have been investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The result showed that polycrystalline and (100)-oriented pure ZnO films were obtained at all substrate temperature of (200ºC an 400ºC), laser fluence (0.4 J/cm2 and the ZnO films grown at 400ºC. X-ray diffraction (XRD) analysis demonstrates that the ZnO thin films with Co of (1, 3 and 5) wt. % have a highly (100) preferred orientation with only one high intense diffraction peak with a full width at half maximum (FWHM) less than 0.3º. The smallest grain size was obtained at scanning electron microscopy (SEM) in case of doping compared by grain size of XRD, while the polycrystalline grain size increased from 32.7 nm to 43.5 nm for pure ZnO films. 2016-04-08T07:29:01Z 2016-04-08T07:29:01Z 2012 Article International Journal of Nanoelectronics and Materials, vol.5 (1), 2012, pages 47-55 1985-5761 (Printed) 1997-4434 (Online) http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41264 en Universiti Malaysia Perlis
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Co-doped ZnO
Pulsed Laser Deposition
U.V emission
XRD
spellingShingle Co-doped ZnO
Pulsed Laser Deposition
U.V emission
XRD
Ali, A. Yousif
Adawiya, J. Haidar
Nadir, F. Habubi
Study of the structure properties of Co-doped ZnO thin films grown by pulsed laser deposition
description Link to publisher's homepage at http://ijneam.unimap.edu.my/
author2 adawiya_haider@yahoo.com
author_facet adawiya_haider@yahoo.com
Ali, A. Yousif
Adawiya, J. Haidar
Nadir, F. Habubi
format Article
author Ali, A. Yousif
Adawiya, J. Haidar
Nadir, F. Habubi
author_sort Ali, A. Yousif
title Study of the structure properties of Co-doped ZnO thin films grown by pulsed laser deposition
title_short Study of the structure properties of Co-doped ZnO thin films grown by pulsed laser deposition
title_full Study of the structure properties of Co-doped ZnO thin films grown by pulsed laser deposition
title_fullStr Study of the structure properties of Co-doped ZnO thin films grown by pulsed laser deposition
title_full_unstemmed Study of the structure properties of Co-doped ZnO thin films grown by pulsed laser deposition
title_sort study of the structure properties of co-doped zno thin films grown by pulsed laser deposition
publisher Universiti Malaysia Perlis
publishDate 2016
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41264
_version_ 1643802788873895936