Design, simulation and process development for Sol Single-Electron Transistor (SET) fabrication

Master of Science (Microelectronic Engineering)

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Main Author: Amiza, Rasmi
Other Authors: Uda Hashim, Assoc. Prof. Dr.
Format: Thesis
Language:English
Published: Kolej Universiti Kejuruteraan Utara Malaysia (KUKUM) 2019
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Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/63459
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Institution: Universiti Malaysia Perlis
Language: English
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spelling my.unimap-634592019-11-29T07:34:53Z Design, simulation and process development for Sol Single-Electron Transistor (SET) fabrication Amiza, Rasmi Uda Hashim, Assoc. Prof. Dr. Sol Single-Electron Transistor (SET) Single-electron transistor (SET) Solid state electronic Silicon-on-insulator technology Single-Electron technology Semiconductor devices Master of Science (Microelectronic Engineering) Single-electron transistor (SET) is one of the promising nanotechnologies and distinguished by a very small device size and low power dissipation. This project explains the SET mask design, SET process flow development, and SET process and device simulation. The SET mask design consists of four level masks namely source and drain mask, polysilicon gate mask, contact mask, and metal mask. These masks were designed in nanometer (10-9 m) size using ELPHY Quantum GDS II Editor Software. The source and drain mask is connected by a nanowire placed between source and drain regions. The nanowire is designed with dimension of approximately 100 nm long and 10 nm wide. The process flow which includes the detailed parameters is developed for SET process and device simulation. This process flow consists of ten process modules include wafer cleaning process, material deposition, source/drain and nanowire formation , thermal oxidation, polysilicon deposition, polysilicon gate formation, source/drain implantation, contact formation, metal deposition and formation, and finally annealing and alloying process. The Synopsys TCAD simulation tools are utilized in SET process and device simulation work. The process and device simulation result shows that the single-electron transistor design with a 100 nm length and 10 nm width of the nanowire is working at room temperature (300 K) operation with a capacitance 0.4297 x 10-18F and a charging energy 186.4 meV. 2019-11-29T07:34:53Z 2019-11-29T07:34:53Z 2006-04 Thesis http://dspace.unimap.edu.my:80/xmlui/handle/123456789/63459 en Kolej Universiti Kejuruteraan Utara Malaysia (KUKUM) School of Microelectronic Engineering
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Sol Single-Electron Transistor (SET)
Single-electron transistor (SET)
Solid state electronic
Silicon-on-insulator technology
Single-Electron technology
Semiconductor devices
spellingShingle Sol Single-Electron Transistor (SET)
Single-electron transistor (SET)
Solid state electronic
Silicon-on-insulator technology
Single-Electron technology
Semiconductor devices
Amiza, Rasmi
Design, simulation and process development for Sol Single-Electron Transistor (SET) fabrication
description Master of Science (Microelectronic Engineering)
author2 Uda Hashim, Assoc. Prof. Dr.
author_facet Uda Hashim, Assoc. Prof. Dr.
Amiza, Rasmi
format Thesis
author Amiza, Rasmi
author_sort Amiza, Rasmi
title Design, simulation and process development for Sol Single-Electron Transistor (SET) fabrication
title_short Design, simulation and process development for Sol Single-Electron Transistor (SET) fabrication
title_full Design, simulation and process development for Sol Single-Electron Transistor (SET) fabrication
title_fullStr Design, simulation and process development for Sol Single-Electron Transistor (SET) fabrication
title_full_unstemmed Design, simulation and process development for Sol Single-Electron Transistor (SET) fabrication
title_sort design, simulation and process development for sol single-electron transistor (set) fabrication
publisher Kolej Universiti Kejuruteraan Utara Malaysia (KUKUM)
publishDate 2019
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/63459
_version_ 1651868842329112576