Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD
Link to publisher's homepage at http://ieeexplore.ieee.org
Saved in:
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineering (IEEE)
2009
|
| Subjects: | |
| Online Access: | http://dspace.unimap.edu.my/xmlui/handle/123456789/6698 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Universiti Malaysia Perlis |
| Language: | English |
| id |
my.unimap-6698 |
|---|---|
| record_format |
dspace |
| spelling |
my.unimap-66982010-11-23T06:34:53Z Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD Arsyad, F. S. Subagio, A. Sutanto, H. Arifin, P. Budiman, M. Barmawi, M. Husien, I. Zul Azhar, Zahid Jamal Aluminium compounds Atomic force microscopy Semiconductor quantum dots Silicon Wide band gap semiconductors PA-MOCVD GaN Quantum Dot [(C2H5)4]Si Deposition Link to publisher's homepage at http://ieeexplore.ieee.org Growth of GaN quantum dots on AlGaN layer using [(C2H 5)4]Si [TESi] by plasma assisted metal organic chemical vapor deposition (PA-MOCVD) is reported. The surface profile of the grown GaN quantum dot was determined by atomic force microscope (AFM). The typical average density of the dots is around 4 × 109 cm-2, while the diameter and the height of the dots are approximately 100 and 50 nm, respectively. The density and the size of the dots significantly depend on the dose of TESi. It is found that the growth mode was changed from the two-dimensional step-flow to the three-dimensional island formation by modifying the AlGaN surface energy induced by the deposited Si. 2009-08-07T02:00:14Z 2009-08-07T02:00:14Z 2006-07 Article p.116-118 1-4244-0452-5 http://ieeexplore.ieee.org/xpls/abs_all.jsp?=&arnumber=4143344 http://hdl.handle.net/123456789/6698 en Proceedings of the 2006 International Conference on Nanoscience and Nanotechnology (ICONN 2006) Institute of Electrical and Electronics Engineering (IEEE) |
| institution |
Universiti Malaysia Perlis |
| building |
UniMAP Library |
| collection |
Institutional Repository |
| continent |
Asia |
| country |
Malaysia |
| content_provider |
Universiti Malaysia Perlis |
| content_source |
UniMAP Library Digital Repository |
| url_provider |
http://dspace.unimap.edu.my/ |
| language |
English |
| topic |
Aluminium compounds Atomic force microscopy Semiconductor quantum dots Silicon Wide band gap semiconductors PA-MOCVD GaN Quantum Dot [(C2H5)4]Si Deposition |
| spellingShingle |
Aluminium compounds Atomic force microscopy Semiconductor quantum dots Silicon Wide band gap semiconductors PA-MOCVD GaN Quantum Dot [(C2H5)4]Si Deposition Arsyad, F. S. Subagio, A. Sutanto, H. Arifin, P. Budiman, M. Barmawi, M. Husien, I. Zul Azhar, Zahid Jamal Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD |
| description |
Link to publisher's homepage at http://ieeexplore.ieee.org |
| format |
Article |
| author |
Arsyad, F. S. Subagio, A. Sutanto, H. Arifin, P. Budiman, M. Barmawi, M. Husien, I. Zul Azhar, Zahid Jamal |
| author_facet |
Arsyad, F. S. Subagio, A. Sutanto, H. Arifin, P. Budiman, M. Barmawi, M. Husien, I. Zul Azhar, Zahid Jamal |
| author_sort |
Arsyad, F. S. |
| title |
Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD |
| title_short |
Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD |
| title_full |
Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD |
| title_fullStr |
Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD |
| title_full_unstemmed |
Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD |
| title_sort |
growth of gan quantum dots using [(c2h5)4]si by plasma assisted mocvd |
| publisher |
Institute of Electrical and Electronics Engineering (IEEE) |
| publishDate |
2009 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/6698 |
| _version_ |
1643788579032268800 |