Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector

Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1 & 2, 2009.

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Main Authors: Raid A., Ismail, Abdulmhdi, T. Rahmitalla, Nasser, K. Mahdi
Format: Article
Language:English
Published: Universiti Malaysia Perlis 2009
Subjects:
Si
Online Access:http://dspace.unimap.edu.my/xmlui/handle/123456789/7120
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Institution: Universiti Malaysia Perlis
Language: English
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spelling my.unimap-71202009-09-03T02:14:46Z Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector Raid A., Ismail Abdulmhdi, T. Rahmitalla Nasser, K. Mahdi Position sensitive detector Si Crystalline Rapid thermal annealing Semiconductors -- Heat treatment Crystals Crystalline silicon Silicon Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1 & 2, 2009. In this paper we report on the effect of rapid thermal annealing (RTA) on the characteristics of diffused crystalline p-n Si one-dimensional (1-D) position sensitive detector (PSD). The Si-PSDs are made with planer technology using thermal diffusion technique for Si doping. The lateral voltage produced by irradiation of He-Ne laser on PSD was parallel to the plane of junction and dependence linearly on laser spot position. The PSD that treated with best RTA condition (850 °C/15s) exhibited higher position sensitivity (104μV/mm) as compared with that for untreated PSD (31μV/mm).Furthermore, the best PSD gave a non-linearity error of 1.46%. The performance improvement factors such as uniformity, linearity, and responsivity of annealed Si-PSDs are presented and analyzed. 2009-09-03T02:14:46Z 2009-09-03T02:14:46Z 2009 Article International Journal of Nanoelectronics and Materials, vol.2 (2), 2009, pages 197-204. 1985-5761 (Printed) 1997-4434 (Online) http://hdl.handle.net/123456789/7120 en Universiti Malaysia Perlis
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Position sensitive detector
Si
Crystalline
Rapid thermal annealing
Semiconductors -- Heat treatment
Crystals
Crystalline silicon
Silicon
spellingShingle Position sensitive detector
Si
Crystalline
Rapid thermal annealing
Semiconductors -- Heat treatment
Crystals
Crystalline silicon
Silicon
Raid A., Ismail
Abdulmhdi, T. Rahmitalla
Nasser, K. Mahdi
Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector
description Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1 & 2, 2009.
format Article
author Raid A., Ismail
Abdulmhdi, T. Rahmitalla
Nasser, K. Mahdi
author_facet Raid A., Ismail
Abdulmhdi, T. Rahmitalla
Nasser, K. Mahdi
author_sort Raid A., Ismail
title Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector
title_short Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector
title_full Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector
title_fullStr Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector
title_full_unstemmed Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector
title_sort effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector
publisher Universiti Malaysia Perlis
publishDate 2009
url http://dspace.unimap.edu.my/xmlui/handle/123456789/7120
_version_ 1643788696420352000