Si-quantum Dots (QD) and SiO2 tunnel barriers

Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation of a nanometerscale island sandwiched between two small capacitors having a...

وصف كامل

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Sutikno, Madnasri, Uda, Hashim, Prof. Dr., Zul Azhar, Zahid Jamal, Prof. Dr.
مؤلفون آخرون: smadnasri@yahoo.com
التنسيق: مقال
اللغة:English
منشور في: Universiti Malaysia Perlis (UniMAP) 2010
الموضوعات:
الوصول للمادة أونلاين:http://dspace.unimap.edu.my/xmlui/handle/123456789/9934
الوسوم: إضافة وسم
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الوصف
الملخص:Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation of a nanometerscale island sandwiched between two small capacitors having a very thin insulator to allow electrons to pass through in a stochastic process, known as PADOX. This oxidation creates an island sandwiched between two tunnel barriers which constitutes a SET. The constriction of Si causes automatic tunnel barrier formation between source–QD and drain-QD. The unique characteristics of PADOX arises from i) the suppression of oxidation by mechanical stress, and ii) the oxidation from below.