Si-quantum Dots (QD) and SiO2 tunnel barriers
Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation of a nanometerscale island sandwiched between two small capacitors having a...
Saved in:
| Main Authors: | , , |
|---|---|
| 其他作者: | |
| 格式: | Article |
| 語言: | English |
| 出版: |
Universiti Malaysia Perlis (UniMAP)
2010
|
| 主題: | |
| 在線閱讀: | http://dspace.unimap.edu.my/xmlui/handle/123456789/9934 |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|
| 總結: | Oxidation of Si for nanostructures on silicon-on-insulator
(SOI) substrates is a key process in the fabrication of Si
single electron transistor (SET). The most di cult aspect of
the fabrication process is the formation of a nanometerscale
island sandwiched between two small capacitors
having a very thin insulator to allow electrons to pass
through in a stochastic process, known as PADOX. This
oxidation creates an island sandwiched between two
tunnel barriers which constitutes a SET. The constriction of
Si causes automatic tunnel barrier formation between
source–QD and drain-QD. The unique characteristics of
PADOX arises from i) the suppression of oxidation by
mechanical stress, and ii) the oxidation from below. |
|---|