Modeling, simulation and optimization of 14nm high-K/metal gate NMOS with taguchi method
The developments in electronics technology push the invention of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) towards smaller physical dimension with improvements in both quality and performance. In this paper, design, fabrication and simulation of electrical characteristics of 14nm La...
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| Main Authors: | , , , , |
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| Format: | Conference Paper |
| Language: | English |
| Published: |
2018
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| Institution: | Universiti Tenaga Nasional |
| Language: | English |