Effects of high-K dielectrics with metal gate for electrical characteristics of 18nm NMOS device
This paper presents a systematic study of various high-K materials on metal gate MOSFET for 18nm NMOS. From the study, we find a suitable combination materials between the high-K and metal gate, which has beneficial effects on the electrical characteristics of 18nm NMOS. The device shows a good impr...
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| Main Authors: | , , |
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| Format: | Conference Paper |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2023
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| Institution: | Universiti Tenaga Nasional |
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