Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules
Conversion efficiency; HVDC power transmission; MOSFET devices; Silicon carbide; Bidirectional isolated dc-dc converter; Conduction loss; Control circuits; Dual active bridges; Gate drives; Power-losses; SiC MOSFET; Switching loss; DC-DC converters
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Institute of Electrical and Electronics Engineers Inc.
2023
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my.uniten.dspace-225772023-05-29T14:02:13Z Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules Akagi H. Yamagishi T. Tan N.M.L. Miyazaki Y. Kinouchi S.-I. Koyama M. 7102912290 57212336284 24537965000 56149085900 6602155998 7201421649 Conversion efficiency; HVDC power transmission; MOSFET devices; Silicon carbide; Bidirectional isolated dc-dc converter; Conduction loss; Control circuits; Dual active bridges; Gate drives; Power-losses; SiC MOSFET; Switching loss; DC-DC converters This paper describes the design, construction, and testing of a 750-V 100-kW 20-kHz bidirectional isolated dual-active-bridge dc-dc converter using four 1.2-kV 400-A SiC-MOSFET/SBD dual modules. The maximum conversion efficiency from the dc-input to the dc-output terminals is accurately measured to be as high as 98.7% at 42-kW operation. The overall power loss at the rated-power (100 kW) operation, excluding the gate-drive and control circuit losses, is divided into the conduction and switching losses produced by the SiC modules, the iron and copper losses due to magnetic devices, and the other unknown loss. The power-loss breakdown concludes that the sum of the conduction and switching losses is about 60% of the overall power loss and that the conduction loss is nearly equal to the switching loss at the 100-kW and 20-kHz operation. � 1972-2012 IEEE. Final 2023-05-29T06:02:13Z 2023-05-29T06:02:13Z 2015 Article 10.1109/TIA.2014.2331426 2-s2.0-84921516343 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84921516343&doi=10.1109%2fTIA.2014.2331426&partnerID=40&md5=9c7b3ed6838b92a04c59103e389c47a7 https://irepository.uniten.edu.my/handle/123456789/22577 51 1 6839038 420 428 Institute of Electrical and Electronics Engineers Inc. Scopus |
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Conversion efficiency; HVDC power transmission; MOSFET devices; Silicon carbide; Bidirectional isolated dc-dc converter; Conduction loss; Control circuits; Dual active bridges; Gate drives; Power-losses; SiC MOSFET; Switching loss; DC-DC converters |
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7102912290 |
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7102912290 Akagi H. Yamagishi T. Tan N.M.L. Miyazaki Y. Kinouchi S.-I. Koyama M. |
| format |
Article |
| author |
Akagi H. Yamagishi T. Tan N.M.L. Miyazaki Y. Kinouchi S.-I. Koyama M. |
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Akagi H. Yamagishi T. Tan N.M.L. Miyazaki Y. Kinouchi S.-I. Koyama M. Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules |
| author_sort |
Akagi H. |
| title |
Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules |
| title_short |
Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules |
| title_full |
Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules |
| title_fullStr |
Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules |
| title_full_unstemmed |
Power-loss breakdown of a 750-V 100-kW 20-kHz bidirectional isolated DC-DC converter using SiC-MOSFET/SBD dual modules |
| title_sort |
power-loss breakdown of a 750-v 100-kw 20-khz bidirectional isolated dc-dc converter using sic-mosfet/sbd dual modules |
| publisher |
Institute of Electrical and Electronics Engineers Inc. |
| publishDate |
2023 |
| _version_ |
1806427782842941440 |