Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics
Dark currents; Electric fields; Electron tunneling; Epitaxial growth; Imaging techniques; Infrared radiation; Metallorganic vapor phase epitaxy; Molecular beam epitaxy; Organometallics; Photodiodes; Electric field profiles; Electrical characteristic; Generation recombination; High electric fields; I...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Conference Paper |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2023
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| Institution: | Universiti Tenaga Nasional |
| Summary: | Dark currents; Electric fields; Electron tunneling; Epitaxial growth; Imaging techniques; Infrared radiation; Metallorganic vapor phase epitaxy; Molecular beam epitaxy; Organometallics; Photodiodes; Electric field profiles; Electrical characteristic; Generation recombination; High electric fields; III-IV semiconductors; InAs; Metal-organic vapor phase epitaxy; Trap assisted tunneling; Narrow band gap semiconductors |
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