Performance characterization of schottky tunneling graphene field effect transistor at 60 nm gate length

benchmarking; computer simulation; design; dielectric property; electronic equipment; optimization; performance assessment; threshold

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Bibliographic Details
Main Authors: Abidin N.F.Z., Ahmad I., Ker P.J., Menon P.S.
Other Authors: 36994666100
Format: Article
Published: Penerbit Universiti Kebangsaan Malaysia 2023
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Institution: Universiti Tenaga Nasional
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