Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF
Resistors; Systems engineering; Aliasing; Applied voltages; High operating frequency; Initial resistance; Memristor; Physically unclonable functions; Window functions; Memristors
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Institute of Electrical and Electronics Engineers Inc.
2023
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my.uniten.dspace-232852023-05-29T14:39:07Z Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF Loong J.T.H. Ismail K.A.S.C. Hamid F.A. 57191483831 57193995132 6603573875 Resistors; Systems engineering; Aliasing; Applied voltages; High operating frequency; Initial resistance; Memristor; Physically unclonable functions; Window functions; Memristors The memristor is the fourth fundamental passive circuit element, whereby it can remember the resistance based on the last applied voltage. Hence, the name 'memory resistor'. Three memristor window functions introduced prior to this paper were taken into discussion where the memristor is inserted into the memristor-based RO-PUF. This was done in order to investigate the effect of having different memristor window functions on the RO-PUF performance in terms of uniqueness, uniformity, and bit-aliasing. While the RO-PUF produces satisfactory results individually, the effect of using different memristor window functions on the RO-PUF performance is not significant. There was little effect because the memristor linearity becomes more prominent with increasing frequency. With that, the memristor acted like a resistor at the high operating frequency of the RO-PUF. Nevertheless, the randomized parameter of initial resistance provided the RO-PUF improved performance. Thus, the RO-PUF performed as expected and is stable regardless of the memristor window function used. � 2016 IEEE. Final 2023-05-29T06:39:06Z 2023-05-29T06:39:06Z 2017 Conference Paper 10.1109/ICAEES.2016.7888086 2-s2.0-85018158866 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85018158866&doi=10.1109%2fICAEES.2016.7888086&partnerID=40&md5=217b6334e9c14aeb32f1d8344ddcf12e https://irepository.uniten.edu.my/handle/123456789/23285 7888086 445 450 Institute of Electrical and Electronics Engineers Inc. Scopus |
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Resistors; Systems engineering; Aliasing; Applied voltages; High operating frequency; Initial resistance; Memristor; Physically unclonable functions; Window functions; Memristors |
| author2 |
57191483831 |
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57191483831 Loong J.T.H. Ismail K.A.S.C. Hamid F.A. |
| format |
Conference Paper |
| author |
Loong J.T.H. Ismail K.A.S.C. Hamid F.A. |
| spellingShingle |
Loong J.T.H. Ismail K.A.S.C. Hamid F.A. Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF |
| author_sort |
Loong J.T.H. |
| title |
Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF |
| title_short |
Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF |
| title_full |
Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF |
| title_fullStr |
Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF |
| title_full_unstemmed |
Effect of different memristor window function with variable random resistance on the performance of memristor-based RO-PUF |
| title_sort |
effect of different memristor window function with variable random resistance on the performance of memristor-based ro-puf |
| publisher |
Institute of Electrical and Electronics Engineers Inc. |
| publishDate |
2023 |
| _version_ |
1806427490702327808 |