Effect of front-surface-field and back-surface-field on the performance of GaAs based-photovoltaic cell

Aluminum gallium arsenide; Conversion efficiency; Efficiency; Electronic design automation; Gallium arsenide; III-V semiconductors; Nanosensors; Nanotechnology; Photoelectrochemical cells; Photovoltaic cells; Photovoltaic effects; Semiconducting gallium; Semiconductor alloys; Active regions; Back su...

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Bibliographic Details
Main Authors: Gamel M., Jern K.P., Rashid E., Jing L.H., Yao L.K., Wong B.
Other Authors: 57215306835
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2023
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Institution: Universiti Tenaga Nasional