Influence of oxygen on structural and optoelectronic properties of CdS thin film deposited by magnetron sputtering technique
In this study, CdS thin films with thicknesses of approximately 100 nm were deposited at a substrate temperature of 100 �C by a sputtering technique under two different ambient conditions�pure Ar ambient and Ar/O2 (99:1) ambient�at deposition power densities of 1.0 and 2.0 W/cm2, respectively The fi...
Saved in:
Main Authors: | , , , , |
---|---|
Other Authors: | |
Format: | Article |
Published: |
Physical Society of the Republic of China
2023
|
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Universiti Tenaga Nasional |
id |
my.uniten.dspace-25212 |
---|---|
record_format |
dspace |
spelling |
my.uniten.dspace-252122023-05-29T16:07:23Z Influence of oxygen on structural and optoelectronic properties of CdS thin film deposited by magnetron sputtering technique Islam M.A. Hatta S.F.W.M. Misran H. Akhtaruzzaman M. Amin N. 57220973693 22634464300 6506899840 57195441001 7102424614 In this study, CdS thin films with thicknesses of approximately 100 nm were deposited at a substrate temperature of 100 �C by a sputtering technique under two different ambient conditions�pure Ar ambient and Ar/O2 (99:1) ambient�at deposition power densities of 1.0 and 2.0 W/cm2, respectively The films were polycrystalline with a preferential orientation along the (002) crystal plane; however, the films deposited in the Ar/O2 ambient exhibited reduced crystallinity. Furthermore, the crystallite sizes, micro-strains, and dislocation densities of the films were significantly affected by oxygen diffusion into the films� crystal structures. The CdS films deposited in the Ar/O2 ambient demonstrated higher optical transmittance and higher bandgaps. Morphologies observed from scanning electron microscopy images revealed that the grains of the films were also significantly affected by the oxygen present in the deposition ambient. Additionally, photoluminescence analysis revealed that the sulfur vacancies in the CdS films were partially filled by oxygen atoms, causing significant variations in the electrical properties of the films. � 2020 The Physical Society of the Republic of China (Taiwan) Final 2023-05-29T08:07:23Z 2023-05-29T08:07:23Z 2020 Article 10.1016/j.cjph.2020.06.010 2-s2.0-85088659372 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85088659372&doi=10.1016%2fj.cjph.2020.06.010&partnerID=40&md5=e1cbc66250c4a2d091322a009ec5846b https://irepository.uniten.edu.my/handle/123456789/25212 67 170 179 Physical Society of the Republic of China Scopus |
institution |
Universiti Tenaga Nasional |
building |
UNITEN Library |
collection |
Institutional Repository |
continent |
Asia |
country |
Malaysia |
content_provider |
Universiti Tenaga Nasional |
content_source |
UNITEN Institutional Repository |
url_provider |
http://dspace.uniten.edu.my/ |
description |
In this study, CdS thin films with thicknesses of approximately 100 nm were deposited at a substrate temperature of 100 �C by a sputtering technique under two different ambient conditions�pure Ar ambient and Ar/O2 (99:1) ambient�at deposition power densities of 1.0 and 2.0 W/cm2, respectively The films were polycrystalline with a preferential orientation along the (002) crystal plane; however, the films deposited in the Ar/O2 ambient exhibited reduced crystallinity. Furthermore, the crystallite sizes, micro-strains, and dislocation densities of the films were significantly affected by oxygen diffusion into the films� crystal structures. The CdS films deposited in the Ar/O2 ambient demonstrated higher optical transmittance and higher bandgaps. Morphologies observed from scanning electron microscopy images revealed that the grains of the films were also significantly affected by the oxygen present in the deposition ambient. Additionally, photoluminescence analysis revealed that the sulfur vacancies in the CdS films were partially filled by oxygen atoms, causing significant variations in the electrical properties of the films. � 2020 The Physical Society of the Republic of China (Taiwan) |
author2 |
57220973693 |
author_facet |
57220973693 Islam M.A. Hatta S.F.W.M. Misran H. Akhtaruzzaman M. Amin N. |
format |
Article |
author |
Islam M.A. Hatta S.F.W.M. Misran H. Akhtaruzzaman M. Amin N. |
spellingShingle |
Islam M.A. Hatta S.F.W.M. Misran H. Akhtaruzzaman M. Amin N. Influence of oxygen on structural and optoelectronic properties of CdS thin film deposited by magnetron sputtering technique |
author_sort |
Islam M.A. |
title |
Influence of oxygen on structural and optoelectronic properties of CdS thin film deposited by magnetron sputtering technique |
title_short |
Influence of oxygen on structural and optoelectronic properties of CdS thin film deposited by magnetron sputtering technique |
title_full |
Influence of oxygen on structural and optoelectronic properties of CdS thin film deposited by magnetron sputtering technique |
title_fullStr |
Influence of oxygen on structural and optoelectronic properties of CdS thin film deposited by magnetron sputtering technique |
title_full_unstemmed |
Influence of oxygen on structural and optoelectronic properties of CdS thin film deposited by magnetron sputtering technique |
title_sort |
influence of oxygen on structural and optoelectronic properties of cds thin film deposited by magnetron sputtering technique |
publisher |
Physical Society of the Republic of China |
publishDate |
2023 |
_version_ |
1806426005688025088 |