Consequence on Optical Properties of ZnS Thin-Film Deposited by RF Magnetron Sputtering with Varying Substrate Temperatures

Buffer layers; Energy gap; Film preparation; II-VI semiconductors; Infrared devices; Lime; Magnetron sputtering; Near infrared spectroscopy; Optical properties; Optoelectronic devices; Semiconducting zinc compounds; Semiconductor devices; Substrates; Sulfur compounds; Thin film solar cells; Wide ban...

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Main Authors: Gupta A.K.S., Ahamed E.M.K.I., Quamruzzaman M., Matin M.A., Rahaman K.S., Amin N.
Other Authors: 57203811680
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2023
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spelling my.uniten.dspace-254292023-05-29T16:09:18Z Consequence on Optical Properties of ZnS Thin-Film Deposited by RF Magnetron Sputtering with Varying Substrate Temperatures Gupta A.K.S. Ahamed E.M.K.I. Quamruzzaman M. Matin M.A. Rahaman K.S. Amin N. 57203811680 57204121738 26425182400 57220488718 57215115889 7102424614 Buffer layers; Energy gap; Film preparation; II-VI semiconductors; Infrared devices; Lime; Magnetron sputtering; Near infrared spectroscopy; Optical properties; Optoelectronic devices; Semiconducting zinc compounds; Semiconductor devices; Substrates; Sulfur compounds; Thin film solar cells; Wide band gap semiconductors; Zinc sulfide; Alternative buffer layers; Morphological properties; Multi-layer thin film; Radio frequency magnetron sputtering; rf-Magnetron sputtering; Soda lime glass substrate; Substrate temperature; UV-vis-NIR spectroscopy; Thin films Earth abundant and ecofriendly zinc sulphide (ZnS) is a direct wide band gap semiconductor material and applications of ZnS thin-films cover a large area including optoelectronic devices. As thin-films of ZnS are highly defective depending on fabrication process, prior to final target applications, properties of thin-films should be studied first. This study was motivated to apply ZnS thin-film as an alternative buffer layer in a chalcogenide based multilayer thin-film solar cell (TFSC) e.g. CZTS using a reliable and clean deposition technique. This study reports mainly on optical properties of ZnS thin-films with varying substrate temperatures. ZnS thin-films were deposited on soda lime glass (SLG) substrates using radio frequency (RF) magnetron sputtering. Room temperature (RT), 150� C, 300� C were taken as substrate temperature variants with RF power and argon (Ar) flow rate remained fixed at 100W and 20 SCCM respectively for all depositions. Structural properties were confirmed by XRD and optical properties were probed by UV-Vis NIR spectroscopy. It was found from structural studies that most of the films were crystallographically cubic type lattice, oriented along (111) plane with Bragg's diffraction angle at 28.95�. The average optical transmittance were found around 87% (invisible and near infrared regions of spectrum). The optical band gaps as obtained were in decreasing nature from 3.96eV to 3.71eV as substrate temperature increased from room temperature to 300�C, were in good agreement with Urbach energy analysis. Although the findings of optical properties are potentially positive, prior to apply ZnS thin-film as a buffer layer in full TFSC fabrication, more investigations will be required on electrical and morphological properties with the same investigated recipe. � 2020 IEEE. Final 2023-05-29T08:09:18Z 2023-05-29T08:09:18Z 2020 Conference Paper 10.1109/PVSC45281.2020.9300428 2-s2.0-85099564557 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85099564557&doi=10.1109%2fPVSC45281.2020.9300428&partnerID=40&md5=918ad718ef1cda14dea58678c72b8fd5 https://irepository.uniten.edu.my/handle/123456789/25429 2020-June 9300428 2646 2648 Institute of Electrical and Electronics Engineers Inc. Scopus
institution Universiti Tenaga Nasional
building UNITEN Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tenaga Nasional
content_source UNITEN Institutional Repository
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description Buffer layers; Energy gap; Film preparation; II-VI semiconductors; Infrared devices; Lime; Magnetron sputtering; Near infrared spectroscopy; Optical properties; Optoelectronic devices; Semiconducting zinc compounds; Semiconductor devices; Substrates; Sulfur compounds; Thin film solar cells; Wide band gap semiconductors; Zinc sulfide; Alternative buffer layers; Morphological properties; Multi-layer thin film; Radio frequency magnetron sputtering; rf-Magnetron sputtering; Soda lime glass substrate; Substrate temperature; UV-vis-NIR spectroscopy; Thin films
author2 57203811680
author_facet 57203811680
Gupta A.K.S.
Ahamed E.M.K.I.
Quamruzzaman M.
Matin M.A.
Rahaman K.S.
Amin N.
format Conference Paper
author Gupta A.K.S.
Ahamed E.M.K.I.
Quamruzzaman M.
Matin M.A.
Rahaman K.S.
Amin N.
spellingShingle Gupta A.K.S.
Ahamed E.M.K.I.
Quamruzzaman M.
Matin M.A.
Rahaman K.S.
Amin N.
Consequence on Optical Properties of ZnS Thin-Film Deposited by RF Magnetron Sputtering with Varying Substrate Temperatures
author_sort Gupta A.K.S.
title Consequence on Optical Properties of ZnS Thin-Film Deposited by RF Magnetron Sputtering with Varying Substrate Temperatures
title_short Consequence on Optical Properties of ZnS Thin-Film Deposited by RF Magnetron Sputtering with Varying Substrate Temperatures
title_full Consequence on Optical Properties of ZnS Thin-Film Deposited by RF Magnetron Sputtering with Varying Substrate Temperatures
title_fullStr Consequence on Optical Properties of ZnS Thin-Film Deposited by RF Magnetron Sputtering with Varying Substrate Temperatures
title_full_unstemmed Consequence on Optical Properties of ZnS Thin-Film Deposited by RF Magnetron Sputtering with Varying Substrate Temperatures
title_sort consequence on optical properties of zns thin-film deposited by rf magnetron sputtering with varying substrate temperatures
publisher Institute of Electrical and Electronics Engineers Inc.
publishDate 2023
_version_ 1806427589667979264