A feasible alternative to fdsoi and finfet: Optimization of w/la2o3/si planar pmos with 14 nm gate-length
Cost effectiveness; Fins (heat exchange); Gate dielectrics; Graphene; High-k dielectric; Low-k dielectric; Silica; Silicon on insulator technology; Silicon oxides; Silicon wafers; Threshold voltage; Voltage scaling; Feasible alternatives; Fin field-effect transistors; Fully depleted silicon-on-insul...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
MDPI
2023
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| Institution: | Universiti Tenaga Nasional |
| Summary: | Cost effectiveness; Fins (heat exchange); Gate dielectrics; Graphene; High-k dielectric; Low-k dielectric; Silica; Silicon on insulator technology; Silicon oxides; Silicon wafers; Threshold voltage; Voltage scaling; Feasible alternatives; Fin field-effect transistors; Fully depleted silicon-on-insulator; Gate-length; MOS-FET; MOSFETs; Performance; PMOS; Taguchi; Technology nodes; FinFET |
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