Impact of different dose and angle in HALO structure for 45nm NMOS device

• Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.
• Other Authors: 36239165300
• Format: Conference paper
• Published: 2023
• Subjects: 45nm NMOS; Component; HALO structure; S/D implant; Taguchi method; TCAD; Growth temperature; Simulators; Taguchi methods; Technology; Threshold voltage; Taguchi; Manufacture
• Institution: Universiti Tenaga Nasional

In this paper, we investigates the different dose and tilt HALO implant step in order to characterize the 45nm NMOS device. Besides HALO, the other two process parameters are oxide growth temperature and source/drain (S/D) implant dose. The settings of process parameters were determined by using Tag...