Impact of HALO structure on threshold voltage and leakage current in 45nm NMOS device

• Main Authors: Salehuddin F., Ahmad I., Hamid F.A., Zaharim A.
• Other Authors: 36239165300
• Format: Conference paper
• Published: 2023
• Subjects: Leakage Current; NMOS Device; Taguchi Method; Threshold Voltage; Growth temperature; Leakage currents; Optimization; Simulators; Taguchi methods; Device simulators; Halo implants; HALO structure; NMOS devices; Oxide growth; Process parameters; Process simulators; Response characteristic; Taguchi; Taguchi experimental-design method; Threshold voltage
• Institution: Universiti Tenaga Nasional

In this paper, we investigate the impact of process parameter like halo structure on threshold voltage (VTH) and leakage current (I Leak) in 45nm NMOS device. The settings of process parameters were determined by using Taguchi experimental design method. Besides halo implant, the other process param...