Feasibility study of Composite Field Effect Transistor (COMFET) in submicron devices

• Main Authors: Farooq S.F.S., Hamid F.A.
• Other Authors: 24463565400
• Format: Conference paper
• Published: 2023
• Subjects: COMFET; Linear composite MOSFET; Linear transconductor; Small signal; Submicron transconductor; Decision making; Field effect transistors; Filtration; Linearization; Photoacoustic effect; Planning; Resource allocation; Students; Transconductance; Continuous-time (CT); Feasibility studies; field effects; I V characteristics; Long channel devices; Research and development; Second order effects; Small signals; Sub micron devices; Submicron length; Transconductors; Research and development management
• Institution: Universiti Tenaga Nasional

A linear transconductor is highly desirable in many applications such as continuous time filtering and ADC. In long channel devices where the I-V characteristic of the transistor follows the square law, COMFET circuit achieves linearity without the need to invoke small signal. This paper studies the...