Theoretical verification of using the Ga-doped ZnO as a charge transport layer in an inorganic perovskite solar cell

• Main Authors: Ahmed S., Akhtaruzzaman M., Zulhafizhazuan W., Yusoff Y., Alnaser I.A., Karim M.R., Shahiduzzaman M., Sobayel K.
• Other Authors: 58573844800
• Format: Article
• Published: Institute of Physics 2024
• Subjects: defect density; GZO; interface defect; perovskite; SCAPS-1D; Activation energy; Conversion efficiency; Defect density; Electric resistance; Electron transport properties; Energy gap; Gallium compounds; II-VI semiconductors; Numerical models; Perovskite solar cells; Transparent conducting oxides; Zinc oxide; Bandgap graded; Charge transport layer; Defects density; Ga-doped ZnO; Inorganics; Interface defects; Power conversion efficiencies; Transport layers; Perovskite
• Institution: Universiti Tenaga Nasional

The study encompasses the idea to employ a single bandgap-graded transport layer in lieu of two different (transparent conducting oxide and electron transport layer) layers in the perovskite solar cell to increase the overall device functionality. Numerical simulation has been used to investigate th...