Deriving the absorption coefficients of lattice mismatched InGaAs using genetic algorithm

• Main Authors: Lee H.J., Ali Gamel M.M., Ker P.J., Jamaludin M.Z., Wong Y.H., Yap K.S., Willmott J.R., Hobbs M.J., David J.P.R., Tan C.H.
• Other Authors: 57190622221
• Format: Article
• Published: Elsevier Ltd 2024
• Subjects: Absorption; Algorithm; Coefficient; Genetic; InGaAs; Lattice-mismatched; Extraction; Gallium alloys; Genetic algorithms; Indium alloys; Infrared radiation; Iterative methods; Semiconducting indium; Semiconducting indium gallium arsenide; Semiconductor alloys; Semiconductor devices; Absorption coefficients; High-performance semiconductors; Photocurrent measurement; Photovoltaic applications; Sensor applications; Structure design; Structure materials; Energy gap
• Institution: Universiti Tenaga Nasional

Lattice-mismatched InGaAs has appeared to be emerging semiconductor materials for sensors and photovoltaic applications. The absorption coefficients of the materials are crucial in designing high-performance semiconductor devices. Nevertheless, the absorption coefficient of lattice-mismatched InGaAs...