Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium

• Main Authors: Sahari, S.K., Kashif, M., Sutan, N.M., Embong, Z., Nik Zaini Fathi, N.A.F., Hamzah, A.A., Sapawi, R., Majlis, B.Y., Ahmad, I.
• Format: Article
• Language: English
• Published: 2017
• Institution: Universiti Tenaga Nasional

Purpose -The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In t...