Modeling and simulation of InAs photodiode on electric field profile and dark current characteristics

• Main Authors: Roslan, P.S.A., Ker, P.J., Ahmad, I., Pasupuleti, J., Fam, P.Z.
• Format: Conference Proceeding
• Language: en_US
• Published: 2017
• Institution: Universiti Tenaga Nasional

This work reports the dark current density-voltage (J-V) characteristics and electric field profile of InAs photodiode with 100μm × 1μm cross sectional area at a temperature of 300K. The device structure was simulated using 2D SILVACO software and the model was used to determine all the optimum mate...