Robust optimization of a silicon lateral pin photodiode
The objective of this paper is to optimize the process parameters for a Si lateral p-in photodiode to obtain high responsivity, frequency response, quantum efficiency and low transient time Four process parameters were chosen, namely the intrinsic region length, photo-absorption layer thickness, the...
Saved in:
| Main Authors: | , , , |
|---|---|
| Format: | |
| Published: |
2017
|
| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5227 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Universiti Tenaga Nasional |
Be the first to leave a comment!