Statistical modelling of 14nm n-types MOSFET

• Main Authors: Noor Faizah, Z.A., Ahmad, I., Ker, P.J., Siti Munirah, Y., Mohd Firdaus, R., Mah, S.K., Menon, P.S.
• Format: Article
• Language: en_US
• Published: 2017
• Institution: Universiti Tenaga Nasional

This paper focuses on virtual modelling and optimization of 14nm n-types planar MOSFET. Here, high-k dielectric and metal gate were used where the high-k material is Hafnium Dioxide (HfO2) and the metal gate is Tungsten Silicide (WSi2). 36 simulations of Taguchi L9 Orthogonal Array method were appli...