Modeling of 14 nm gate length n-Type MOSFET

• Main Authors: Faizah, Z.A.N., Ahmad, I., Ker, P.J., Roslan, P.S.A., Maheran, A.H.A.
• Published: 2017
• Online Access: http://dspace.uniten.edu.my/jspui/handle/123456789/5980
• Institution: Universiti Tenaga Nasional

Metal-Oxide-Semiconductor Field Effect Transistors MOSFETs (MOSFETs) transistor have been scaled tremendously through Moore's Law since 1974 in order to compact transistors in a single chip. Thus, a proper scaling technique is compulsory to minimize the short channel effect (SCE) problems. In t...