High speed low noise InAs electron avalanche photodiodes for telecommunication and infrared sensing applications

• Main Authors: Ker, P.J., Tan, C.H., David, J.P.R.
• Format: Conference Proceeding
• Language: en_US
• Published: 2017
• Institution: Universiti Tenaga Nasional

The leakage current, avalanche gain, excess noise and frequency response of InAs avalanche photodiodes (APDs) were investigated. Despite having a narrow bandgap, InAs APDs, which were fabricated using optimized fabrication procedures and surface passivation technique, were able to provide reasonably...