Temperature dependence of gain and excess noise in InAs electron avalanche photodiodes

• Main Authors: Ker, P.J., David, J.P.R., Tan, C.H.
• Format: Article
• Language: en_US
• Published: 2017
• Institution: Universiti Tenaga Nasional

Measurement and analysis of the temperature dependence of avalanche gain and excess noise in InAs electron avalanche photodiodes (eAPDs) at 77 to 250 K are reported. The avalanche gain, initiated by pure electron injection, was found to reduce with decreasing temperature. However no significant chan...