Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing
Dark current measurements on SU-8 passivated InAs avalanche photodiodes (APDs) were carried out at temperatures ranging from 77 to 290 K. Extraction of the bulk and surface components suggested that the InAs APDs exhibit diffusion dominated bulk current and generation-recombination surface current....
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| Main Authors: | , , , |
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| Format: | Article |
| Language: | en_US |
| Published: |
2017
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| Institution: | Universiti Tenaga Nasional |
| Language: | en_US |