Temperature dependence of leakage current in InAs avalanche photodiodes

• Main Authors: Ker, P.J., Marshall, A.R.J., Krysa, A.B., David, J.P.R., Tan, C.H.
• Format: Article
• Language: en_US
• Published: 2017
• Institution: Universiti Tenaga Nasional

Measurement and analysis of the temperature dependence of bulk and surface leakage currents in InAs avalanche photodiodes have been performed between 77 K and 290 K. At unity gain, SU-8 passivated InAs photodiodes have low dark current densities of 100 mA/cm2 at 290 K and 150 nA/cm2 at 77 K. An aval...