Modelling and mitigating oscillation in E-mode GaN HEMT: A simulation-based approach to parasitic inductance optimization

• Main Authors: Liu, Xinzhi, Shafie, Suhaidi, Radzi, Mohd Amran Mohd, Azis, Norhafiz, Karim, Abdul Hafiz Abdul
• Format: Article
• Published: Elsevier Ltd 2024
• Online Access: http://psasir.upm.edu.my/id/eprint/105834/; https://www.sciencedirect.com/science/article/pii/S0026271423003931
• Institution: Universiti Putra Malaysia

The escalating demands in energy conversion necessitate the evolution of efficient power electronic devices beyond the limitations of traditional silicon (Si) counterparts. This research delves into the intricacies of the Enhancement mode Gallium Nitride High Electron Mobility Transistor (E-mode GaN...