ZnO doping profile effect on CIGS solar cells efficiency and parasitic resistive losses based on cells equivalent circuit

• Main Authors: Khoshsirat, Nima, Md Yunus, Nurul Amziah, Hamidon, Mohd Nizar, Shafie, Suhaidi, Amin, Nowshad
• Format: Conference or Workshop Item
• Language: English
• Published: IEEE 2013
• Online Access: http://psasir.upm.edu.my/id/eprint/68349/1/ZnO%20doping%20profile%20effect%20on%20CIGS%20solar%20cells%20efficiency%20and%20parasitic%20resistive%20losses%20based%20on%20cells%20equivalent%20circuit.pdf; http://psasir.upm.edu.my/id/eprint/68349/
• Institution: Universiti Putra Malaysia

The window layer of the CIGS thin film solar cells plays the role of transparent front contact and the n-side of pn-heterojunction. Thus the variation of window layers electrical and optical properties can affect the cell performance. Properties of Al-doped Zinc oxide (ZnO) thin film as most common used window layer for CIGS solar cells were studied via simulation using the simulation program called SCAPS-1D. This study is aimed to find the effect of ZnO layer doping profile on cell performance. It is found that increasing Al-content up to 5% in ZnO layer will lead to increasing the cell efficiency and will decrease the cell series and shunt resistance.